RE: RF transistor specs

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From: Makoto Minowa (minowa@icepp.s.u-tokyo.ac.jp)
Date: Thu Apr 03 1997 - 01:28:23 EST


Al,

Here are specs for 2SC2075 and 2SC1968 quoted from THE HIGH FREQUENCY
DEVICE MANUAL 1990 edition, CQ Publishing, Tokyo.

2SC2075 is Toshiba's HF RF power transistor.

Maximum ratings
VCBO = 80.0 V
VEBO = 4.0 V
IC = 4.0 A
PC = 10.0 W for TC=25 deg C
Tj =150.0 deg C

Electrical characteristics
ICBO = 10.0 uA(max) with VCB=30 V, IE=0
hFE1 = 25.0 (min) with VCE= 5 V, IC=0.5 A
hFE2 = 15.0 (min) with VCE= 2 V, IC=3 A
fT =100.0 MHz(typ)with VCE= 5 V, IC=500 mA
Cob = 40.0 pF(typ) with VCE=10 V, IE=0, f=1MHz
Po = 3.5 W (min) with VCC=12 V, f=27MHz, Pi=0.3 W

pin assignment is
------------
| | |===-------- E
|( ) | |===-------- C
| | |===-------- B
------------
Fin is connected with the collector

2SC1968 is Mitsubishi's >>UHF<< RF power transistor.
Po = 16.0 W (typ) with VCC=13.5 V, Pi =6 W, f=470 MHz
Since it is for UHF, most of you may not have much interest.
Therefore, I do not quote the full data for it. Those who really
want detailed spec of 2SC1968, please ask me by e-mail.

Hope this helps you.

7N3WVM
MINOWA, Makoto
QRP-L member #572.
A bigot with no Yaesu, no Kenwood and no ICOM in his shack.


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